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  • Modeling of minority carrier recombination and resistivity in SiGe . . .
    (HBT) is reviewed, along with the catalysts for the increasing use of SiGe BiCMOS technology as an extreme-environment electronics platform Subsequently, the low-temperature operation and radiation response of the SiGe HBT is summarized Chapter 2 presents an overview of minority-carrier recombination lifetime in silicon
  • Modeling of minority carrier recombination and resistivity in sige . . .
    The focus is on the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) and its application in extreme-environment electronics Detailed analyses of minority-carrier recombination lifetime and low-temperature resistivity are provided, alongside the development of calibrated TCAD-relevant models
  • 14: Radiation response of minority electron lifetime . . . - ResearchGate
    from publication: Modeling of minority carrier recombination and resistivity in sige bicmos technology for extreme environment applications | This work presents a summary of experimental data and
  • Measurement and Modeling of Carrier Transport Parameters Applicable to . . .
    Abstract: We present experimental data and theoretical models that characterize the temperature-dependent behavior of key carrier-transport parameters in a commercial SiGe BiCMOS technology down to cryogenic temperatures and under exposure to ionizing radiation The theoretical temperature and injection dependencies of Shockley-Read-Hall recombination lifetimes are examined, and experimental
  • SiGe HBT Technology - Innovations for High Performance Microelectronics
    16 SiGe HBT Technology B = w2 B 2D nB + w B v sat; (1 8) ˝ BC = w BC 2v sat: (1 9) Here, w B is the width of the neutral base region, w BC is the depletion width of the base–collector junction, D nB is the electron diffusion coefficient in the base, and v sat is the saturation velocity of electrons C E and C N denote the parts of the diffusion capacitance related to neutral charge storage in
  • A Review of Minority Carrier Recombination Lifetime Measurements - IJRASET
    The recombination lifetime of minority carriers is a critical parameter in semiconductor devices such as photovoltaic cells since it controls the efficiency of such devices vol 23, no 1, pp 29–36, 2020 [5] M Z Rahman, “Modeling minority carrier’s recombination lifetime of p-si solar cell,” International journal of renewable
  • MODELING OF MINORITY CARRIER RECOMBINATION AND RESISTIVITY IN SIGE . . .
    modeling of minority carrier recombination and resistivity in sige bicmos technology for extreme environment applications @inproceedings{Moen2008MODELINGOM, title={MODELING OF MINORITY CARRIER RECOMBINATION AND RESISTIVITY IN SIGE BICMOS TECHNOLOGY FOR EXTREME ENVIRONMENT APPLICATIONS}, author={Kurt Andrew Moen}, year={2008}, url={https: api
  • Modeling of minority carrier recombination and resistivity in sige . . .
    This work presents a summary of experimental data and theoretical models that characterize the temperature-dependent behavior of key carrier-transport parameters in silicon down to cryogenic temperatures In extreme environment applications such as space-based electronics, accurate models of carrier recombination, carrier mobility, and incomplete ionization of dopants form a necessary
  • 9: Comparison of model fits to npn HBT base sheet resistance.
    from publication: Modeling of minority carrier recombination and resistivity in sige bicmos technology for extreme environment applications | This work presents a summary of experimental data and
  • Validation of minority carrier recombination lifetimes in low . . .
    The effective minority recombination lifetime τ 0 can be found from the correlation with J s as J s = q n i W d e p 2 τ 0 ⁠, which is in the sub-nanosecond range for unpassivated nanowires (see Table I) but increases to tens of nanoseconds, largely consistent with literature reports 20 For low-dimensional devices, the effective minority





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