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  • A dopant is implanted into a p-type silicon wafer | Chegg. com
    Dopant: Phosphorus Oxide mask thickness: xm = 0 2 × 10-4 (cm) Dose: Q = 1 × 1014 (cm-2) Energy: A dopant i s implanted into a p - type silicon wafer containing a n oxide mask and then annealed according t o the parameters given
  • Solved Which of the following is true ? Select one: O a. - Chegg
    Boron is often used as an N-type dopant in Silicon b Phosphorus is often used as an N-type dopant in Silicon O c All of these O d Arsenic is often used as a P-type dopant in Silicon O e Carbon is often used as a P-type dopant in Silicon In a semiconductor doped with donor atoms, the number of holes is much higher than the number of electrons
  • Theoretical Data • Mass of chiral dopant = 0. 32 g - Chegg
    Question: Theoretical Data • Mass of chiral dopant = 0 32 g • Melting point of chiral dopant = 87-89 °C • Calculate the % yield of chiral dopant • Melting point of EBBA = 40 °C • Clearing point of EBBA = 80 °C • Discuss the results (yield MP)
  • Solved We consider an n-doped amorphous silicon layer - Chegg
    Relative dopant concentration is given as the ratio of dopant atom density over silicon atomic density The doping efficiency is the average number of charge carriers provided by one dopant atom at room temperature This material has a dopant atom density of 5E19 cm3, and an electron mobility of 0 5 cm2 Vs
  • Solved What type of atom is needed as a dopant in a p-type - Chegg
    The term p-type semiconductor means that we use phosphorus as a dopant The term p-type semiconductor means that we use phosphorus as a dopant The term p - type semiconductor refers to the electron "holes" which can be viewed as positive areas in the sea of electrons The term p - type semiconductor refers to the electron "holes" which can be
  • Solved Problem 08. 006 - The behavior of the charge carriers - Chegg
    Question: Problem 08 006 - The behavior of the charge carriers and ionized dopant atoms in the vicinity of a semiconductor pn junctionIdentify the true statements about the behavior of charge carriers and ionized dopant atoms in the vicinity of a semiconductor pn junction that causes the potential (energy) barrier, which tends to prevent the charge carriers from
  • Solved You are trying to build an n-type impurity | Chegg. com
    Question: You are trying to build an n-type impurity semiconductor and know the properties of the silicon as well as the dopant To make the semiconductor, you will use a dopant with Group of answer choices a conduction band just above the Fermi energy of silicon a valence band just below the Fermi energy of silicon a Fermi energy just above
  • Solved An abrupt silicon pn junction at zero bias has - Chegg
    An abrupt silicon pn junction at zero bias has dopant concentrations of Na = 1017 cm3 and Nd = 5 x 1015 cm-3 at T = 300K (a) Calculate the Fermi level on each side of the junction with respect to the intrinsic Fermi level (b) Sketch the equilibrium energy band diagram for the junction and determine Vbi from the diagram and the results of part
  • Solved Consider an n-type silicon for which the dopant - Chegg
    Consider an n-type silicon for which the dopant concentration No = 101 cm? Find the electron and hole concentrations at T = 300 K O Solution The concentration of the majority electrons is 7,- Ny = 10cm The concentration of the minority holes is P In Example 3 1 we found that at T= 300 K, n; = 1 5 x 10"%cm°
  • Solved Question 7. a. The process of adding of impurity - Chegg
    Boron decomposed from the gas diborane (B₂H₂) is a common dopant for doping silicon To enable the boron atoms to diffuse into the silicon semiconductor lattice the temperature in a doping chamber is maintained at 1000 °C, the concentration of B₂H, gas on the silicon wafer surface is 1020 cm and the time for completing the doping process





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