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  • PROCESS-VOLTAGE-TEMPERATURE (PVT) VARIATIONS AND STATIC . . .
    Static Timing Analysis (STA) does not require input vectors and has a runtime that is linear with the size of the circuit [9] PVT vs Delay Sources of variation can be: • Process variation (P) • Supply voltage (V) • Operating Temperature (T) Process Variation [14] This variation accounts for deviations in the semiconductor fabrication
  • Study of Temperature Dependency on MOSFET Parameter using
    voltage, variations in threshold voltage causes severe variations, mainly in the operational frequency, in some cases operational frequency may vary up to 30% within the same chip Threshold voltage variations also leads to increased leakage current that degrades the overall performance of the device in terms of increased power dissipation
  • Process-Voltage-Temperature (PVT) Variations and Static . . .
    This time varying current (for a short period of time) causes an opposite self-induced electromotive force The amplitude of the voltage drop is given by V=L*dI dt, where L is the self inductance and I is the current through the line Operating Temperature Variation [14] Temperature variation is unavoidable in the everyday operation of a design
  • Parameter Variations and Impact on Circuits and Microarchitecture
    Figure 3: Supply voltage variation Variations in switching activity across the die and diversity of the type of logic, result in uneven power dissipation across the die This variation results in uneven supply voltage distribution and temperature hot spots, across a die, causing transistor subthreshold leakage variation across the die
  • Prof. D. Zhou UT Dallas
    Process-Voltage-Temperature Supply Voltage Variation (V) Throughout a chip, the power supply is not constant and hence the propagation delay varies in a chip The voltage drop is due to nonzero resistance in the supply wires The self-inductance of a supply line contributes also to a voltage drop Analog Circuits Design Automation 7
  • An Analytical MOS Device Model with Mismatch and Temperature . . .
    do not provide a simple analytical relationship that accounts for both drain-current mismatch and temperature [11], [12], [13] To address this, we develop a physics-based analytical MOS device model with just seven parameters This model saves the designer from repeatedly running tedious MC sim-ulations on the complete circuits This compact
  • Advanced VLSI Design Process Variations CMPE 640
    Process variations are not the only source of variation that impacts performance Variations in the power supply voltage can occur as well A 10% variations can be expected fast: V DD = 2 75 V: I D = 302 mA (+37%) slow: V DD = 2 2 5 V: I D = 155 mA (-30%) This illustrates that the current levels, and therefore the performance, can vary by as much





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