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  • A planar defect spin sensor in a two-dimensional material . . . - Nature
    the VB centre has a spin triplet ground state (S=1) with D 3h The VB centre in hBN is a single vacancy at the boron site in the 3h symmetry from the components of the strain and spin tensors
  • arXiv:2304. 00492v1 [quant-ph] 2 Apr 2023
    The boron-vacancy spin defect (V B) in hexagonal boron nitride (hBN) has a great potential as a quantum sensor in a two-dimensional material that can directly probe various external perturbations in atomic-scale proximity to the quantum sensing layer Here, we apply rst principles calculations to determine the coupling of the V B electronic
  • Spin-strain interaction in nitrogen-vacancy centers in diamond
    The interaction of solid-state electronic spins with deformations of their host crystal is an important ingredient in many experiments realizing quantum information processing schemes Here, we theoretically characterize that interaction for a nitrogen-vacancy (NV) center in diamond We derive the symmetry-allowed Hamiltonian describing the interaction between the ground-state spin-triplet
  • Spin-dependent photodynamics of boron-vacancy centers in hexagonal . . .
    The negatively charged boron vacancy (V B −) center in hexagonal boron nitride (hBN) is currently garnering considerable attention for the design of two-dimensional (2D) quantum sensing units Such developments require a precise understanding of the spin-dependent optical response of V B − centers, which still remains poorly documented despite its key role for sensing applications
  • Theory of Spin-Conserving Excitation of the N-V- Center in Diamond
    The energy ladders show the phonon energies with the phonon ground states at n = 0 (ground state of the defect) and m = 0 (excited state) At elevated temperatures the high-energy phonon states can be occupied by inducing transition A → B (vertical absorption, green arrow), and C → D (vertical emission, red arrow)
  • [2504. 08099] Spin Qubit Properties of the Boron-Vacancy Carbon Defect . . .
    Spin qubit defects in two-dimensional materials have a number of advantages over those in three-dimensional hosts including simpler technologies for the defect creation and control, as well as qubit accessibility In this work, we select the VBCB defect in the hexagonal boron nitride (hBN) as a possible optically controllable spin qubit and explain its triplet ground state and neutrality In
  • Researchers optimize simulations of molecules on quantum computers . . .
    The Hamiltonian that describes the spins is then mapped onto a quantum processor, with a cluster of linked qubits devoted to the behavior of each individual spinning electron
  • Optically Active Spin Defects in Few-Layer Thick Hexagonal Boron . . .
    Optically active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to the sample being probed In this Letter, we first demonstrate that the electron spin resonance frequencies of boron vacancy centers (${V}_{\\mathrm{B}}^{\\ensuremath{-}}$) can be detected optically in the limit of few
  • Electron-nuclear coherent coupling and nuclear spin readout through . . .
    2 charged boron vacancy (VB −), a missing boron atom having three equivalent nitrogen atoms as nearest neighbors, as schematically shown in Fig 1 (a) [8, 16, 17] VB− possesses a spin-triplet (S=1) ground state, whereby the spin-spin interaction between the unpaired spins induces energy-level splittings (D≅ 3 6 GHz) even in the zero magnetic field
  • Isotopic Control of the Boron-Vacancy Spin Defect in Hexagonal Boron . . .
    15N nuclei in h10B15N, whose mechanism relies on electron-nuclear spin mixing in the V− B ground state This work opens up new prospects for future developments of spin-based quantum sensors and simulators on a two-dimensional material platform The negatively-charged boron-vacancy (V− B) center in hexagonal boron nitride (hBN) is a
  • A quantum coherent spin in a two-dimensional material at room temperature
    inequivalent nitrogen and boron nuclei A ground-state electronic spin triplet We investigate multilayer hBN that is grown via metal organic vapour phase epitaxy (MOVPE) using a carbon precursor and ammonia (54), resulting in single-photon emitting and spin-active defects that are related to carbon (55) The flow rate of the carbon precursor





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